FQPF6N40C

MOSFET 400V N-Ch Q-FET advance C-Series

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FQPF6N40C Picture
SeekIC No. : 00160483 Detail

FQPF6N40C: MOSFET 400V N-Ch Q-FET advance C-Series

floor Price/Ceiling Price

Part Number:
FQPF6N40C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 1 Ohms


Features:

• 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol
Parameter
FQP6N40C
FQPF6N40C
Units
VDSS Drain-Source Voltage
400
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6
6 *
A
3.6
3.6 *
A
IDM Drain Current - Pulsed (Note 1)
24
24 *
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy (Note 2)
270
mJ
IAR Avalanche Current (Note 1)
6
A
EAR Repetitive Avalanche Energy (Note 1)
7.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
73
W
0.58
380.3

W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to +150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
-300
°C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature



Description

These N-Channel enhancement mode power field effect transistors of FQPF6N40C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF6N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF6N40C is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.




Parameters:

Technical/Catalog InformationFQPF6N40C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs1 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 625pF @ 25V
Power - Max38W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF6N40C
FQPF6N40C



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