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FQPF7N65C_F105

MOSFET 650V N-Chan Advance Q-FET C-Series

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SeekIC No. : 00162828 Detail

FQPF7N65C_F105: MOSFET 650V N-Chan Advance Q-FET C-Series

FQPF7N65C_F105 Data Sheet

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Part Number:
FQPF7N65C_F105
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 1.4 Ohms


Parameters:

Technical/Catalog InformationFQPF7N65C_F105
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 1245pF @ 25V
Power - Max52W
PackagingTube
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF7N65C_F105
FQPF7N65C_F105



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