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FQPF8N60CF

Features: • 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 12 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Parameter Parameter Value Units VDSS Drain-Source Voltage ...

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SeekIC No. : 004343340 Detail

FQPF8N60CF: Features: • 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 12 pF)• Fast switching• 100% avalanche tested• Improved d...

FQPF8N60CF Data Sheet

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Part Number:
FQPF8N60CF
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Parameter Parameter Value Units
VDSS Drain-Source Voltage 600 V
ID Drain Current- Continuous (TC = 25°C) 6.26 A
- Continuous (TC = 25°C) 3.96 A
IDM Drain Current - Pulsed (Note 1) 25 A
PD Power Dissipation (TC = 25°C) 147 W
- Derate above 25°C 1.18 W/
EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ
IAR Avalanche Current (Note 1) 6.26 A
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
Tj, Tstg Operating Junction Temperature Range -55 to +150
TL Storage Temperature Range 300



Description

These N-Channel enhancement mode power field effect transistors of FQPF8N60CF are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF8N60CF has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF8N60CF is well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.




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