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MFG:TO-220F  Package Cooled:7850  D/C:FAIRCHILD  

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Part Number: FQPF8P10

 

MFG: TO-220F

Package Cooled: 7850

D/C: FAIRCHILD

Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stri...


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FQPF8P10 General Description


These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FQPF8P10 Maximum Ratings

Symbol Parameter FQPF8P10 Units
VDSS Drain-Source Voltage -100 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 -5.3 A
-3.8 A
IDM Drain Current - Pulsed (Note 1) -21.2 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ
IAR Avalanche Current (Note 1) -5.3 A
EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25		 28
 W
0.19 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +175
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds		 300

FQPF8P10 Features

• -5.3A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

FQPF8P10 datasheet

FQPF8P10
PDF/DataSheet Download

  • Datasheet: FQPF8P10
  • File Size: 683341 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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