Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Continuous Drain Current
: 90 A
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Resistance Drain-Source RDS (on)
: 0.01 Ohms
Features: • 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP90N10V2 |
FQPF90N10V2 |
Units |
| VDSS |
Drain-Source Voltage |
100 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100) |
90 |
90* |
A |
| 68 |
68* |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
360 |
360* |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
2430 |
mJ |
| IAR |
Avalanche Current (Note 1) |
90 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
35 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
250 |
83
|
W |
| 1.67 |
0.55 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF90N10V2 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF90N10V2 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF90N10V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.
Parameters: | Technical/Catalog Information | FQPF90N10V2 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 90A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 45A, 10V |
| Input Capacitance (Ciss) @ Vds | 6150pF @ 25V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 191nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF90N10V2
FQPF90N10V2
|
FQPF90N10V2 Data Sheet
