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MFG:TO-220F  Package Cooled:7850  D/C:FAIRCHILD  

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Part Number: FQPF90N10V2

 

MFG: TO-220F

Package Cooled: 7850

D/C: FAIRCHILD

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stri...


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FQPF90N10V2 General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

FQPF90N10V2 Maximum Ratings

Symbol Parameter FQP90N10V2 FQPF90N10V2 Units
VDSS Drain-Source Voltage 100 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 90 90* A
68 68* A
IDM Drain Current - Pulsed (Note 1) 360 360* A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 2430 mJ
IAR Avalanche Current (Note 1) 90 A
EAR Repetitive Avalanche Energy (Note 1) 35 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25		 250 83
 W
1.67 0.55 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +175
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds		 300

FQPF90N10V2 Features

• 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF90N10V2 datasheet

FQPF90N10V2
PDF/DataSheet Download

  • Datasheet: FQPF90N10V2
  • File Size: 943391 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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