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MFG:TO-220F  Package Cooled:7850  D/C:FAIRCHILD  

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Part Number: FQPF9N25C

 

MFG: TO-220F

Package Cooled: 7850

D/C: FAIRCHILD

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stri...


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FQPF9N25C General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

FQPF9N25C Maximum Ratings

Symbol Parameter FQP9N25C FQPF9N25C Units
VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)		 8.8 8.8 *
 A
5.6 5.6 * A
IDM Drain Current - Pulsed (Note 1) 35.2 35.2 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 285 mJ
IAR Avalanche Current (Note 1) 8.8 A
EAR Repetitive Avalanche Energy (Note 1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25		 74 38 W
0.59 0.3 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8' from case for 5 seconds		 300

FQPF9N25C Features

• 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V
• Low gate charge ( typical 26.5 nC)
• Low Crss ( typical 45.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF9N25C datasheet

FQPF9N25C
PDF/DataSheet Download

  • Datasheet: FQPF9N25C
  • File Size: 1163455 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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