MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Descriptions: MOSFET N-CH 250V 8.8A TO-220F
800
.53760
430.08
| Technical/Catalog Information | FQPF9N25CYDTU |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 710pF @ 25V |
| Power - Max | 38W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF9N25CYDTU FQPF9N25CYDTU |
FQP10N20
PDF/DataSheet Download
MOSFET N-CH 250V 8.8A TO-220F
These N-Channel enhancement mode power field effect transistors of FQPF9N25Care produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology of FQPF9N25Chas been especially tailored to minimize on-state resistance, provide ...
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These N-Channel enhancement mode power field effect transistors of FQPF9N08Lare produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology of FQPF9N08Lis especially tailored to minimize on-state resistance, provide superi...
These N-Channel enhancement mode power field effect transistors of FQPF9N08are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology of FQPF9N08is especially tailored to minimize on-state resistance, provide superior...
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