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Part Number: FQPF9N50C

 

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Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar s...


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FQPF9N50C General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQPF9N50C Maximum Ratings

Symbol Parameter FQP9N50C FQPF9N50C Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
9 9*
A
5.4 5.4* A
IDM Drain Current - Pulsed (Note 1) 36 36* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ
IAR Avalanche Current (Note 1) 9 A
EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
135 44 W
1.07 0.35 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8' from case for 5 seconds
300

FQPF9N50C Features

• 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQPF9N50C datasheet

FQPF9N50C
PDF/DataSheet Download

  • Datasheet: FQPF9N50C
  • File Size: 865903 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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