MFG:FSC Package Cooled:N/A D/C:09+
MFG: FSC
Package Cooled: N/A
D/C: 09+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar s...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies.
| Symbol | Parameter | FQP9N90C | FQPF9N90C | Units |
| VDSS | Drain-Source Voltage | 900 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
8.0 | 8.0* |
A |
| 2.8 | 2.8* | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 32 | 32* | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 900 | mJ | |
| IAR | Avalanche Current (Note 1) | 8.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 20.5 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.0 | V/ns | |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
205 | 68 | W |
| 1.64 | 0.54 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8' from case for 5 seconds |
300 | ||
FQPF9N90C
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These N-Channel enhancement mode power field effect transistorsof FQPF9N50CFare produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology of FQPF9N50CFhas been especially tailored to minimize on-state resistance, provide...
These N-Channel enhancement mode power field effect transistors of FQPF9N50Care produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology of FQPF9N50Chas been especially tailored to minimize on-state resistance, provide ...
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