MOSFET N-Ch 60V/ P-Ch 300V Dual QFET
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| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | + 60 V / - 300 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.3 A, - 0.3 A | ||
| Resistance Drain-Source RDS (on) : | 0.39, 11.2 Ohms | Configuration : | Dual Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOP-8 | Packaging : | Reel |
| Technical/Catalog Information | FQS4900TF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 60V, 300V |
| Current - Continuous Drain (Id) @ 25° C | 1.3A, 300mA |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 650mA, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 2.1nC @ 5V |
| Package / Case | 8-SOP |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQS4900TF FQS4900TF |