FQU11P06TU, US $ .27-.4 , Fairchild Semiconductor, FQU11P06TU DataSheet download, circuit diagram from SeekIC.com

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FQU11P06TU: MOSFET 60V P-Channel QFET

FQU11P06TU Data Sheet

US $ .27~.4 / Piece | Get Latest Price

Part Number:: FQU11P06TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/29

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What is this?

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US $.15 - .17 / Piece

MOSFET N-CH/200V/10A/QFET
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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 60 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	- 9.4 A
Resistance Drain-Source RDS (on) :	0.185 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Resistance Drain-Source RDS (on) : 0.185 Ohms
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 60 V
Package / Case : IPAK
Continuous Drain Current : - 9.4 A

Parameters:

Technical/Catalog Information	FQU11P06TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	9.4A
Rds On (Max) @ Id, Vgs	185 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	550pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU11P06TU FQU11P06TU

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FQU11P06TU

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