FQU2N100TU, US $ .4-.65 , Fairchild Semiconductor, FQU2N100TU DataSheet download, circuit diagram from SeekIC.com

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FQU2N100TU: MOSFET 1000V/1.6A/N-CH

FQU2N100TU Data Sheet

US $ .4~.65 / Piece | Get Latest Price

Part Number:: FQU2N100TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/4

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	1.6 A
Resistance Drain-Source RDS (on) :	7.1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 1.6 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 7.1 Ohms

Parameters:

Technical/Catalog Information	FQU2N100TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	1.6A
Rds On (Max) @ Id, Vgs	9 Ohm @ 800mA, 10V
Input Capacitance (Ciss) @ Vds	520pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	15.5nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU2N100TU FQU2N100TU

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FQU2N100TU

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