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MFG:KA Package Cooled:TO-
Part Number: FQU2P40
MFG: KA
Package Cooled: TO-
Description: These P-Channel enhancement mode power field effect transistors are produced using ...
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FQU2P40
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DataSheet
General Description
FQU2P40 General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
FQU2P40 Maximum Ratings
| Symbol | Parameter | FQD2P40 / FQU2P40 | Units |
| VDSS | Drain-Source Voltage | -400 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
-1.56 | A |
| -0.98 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | -6.24 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 120 | mJ |
| IAR | Avalanche Current (Note 1) | -1.56 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | -4.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
38 | W | |
| 0.3 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
FQU2P40 Features
• -1.56A, -400V, RDS(on) = 6.5Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU2P40
PDF/DataSheet Download
- Datasheet: FQU2P40
- File Size: 732245 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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