MFG:FAIRC Package Cooled:TO-251(IPAK) D/C:09+
MFG: FAIRC
Package Cooled: TO-251(IPAK)
D/C: 09+
Description: These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's propriet...
These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
|
Symbol |
Parameter |
FQD13N06/FQU13N06 |
Units |
|
VDSS |
Drain-Source Voltage |
60 |
V |
|
ID |
Drain Current- Continuous (TC = 25)
- Continuous (TC= 100) |
24 |
A |
|
15 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
96 |
A |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
400 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
24 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
4.4 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
|
PD |
Power Dissipation (TA = 25) * |
2.5 |
W |
|
Power Dissipation (TC = 25)
- Derate above 25 |
44 |
W | |
|
0.35 |
W/ | ||
|
TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
|
TL |
Maximumleadtemperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
24A, 60V, RDS(on)= 0.039 @ VGS= 10V
Low gate charge ( typical 15 nC)
Low Crss ( typical 50 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
150maximum junction temperature rating
Low level gate drive requirements allowing directoperation form logic drivers
FQU30N06L
PDF/DataSheet Download
These N-Channel enhancement mode power field effect transistors of FQU30N06are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology of FQU30N06has been especially tailored to minimize on-state resistance, provide ...
These P-Channel enhancement mode power field effect transistors of FQU2P40are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology of FQU2P40is especially tailored to minimize on-state resistance, provide superior...
These P-Channel enhancement mode power field effect transistors of FQU2P25are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology of FQU2P25has been especially tailored to minimize on-state resistance, provide su...
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