Purchase FQU3N25, In-stock FQU3N25 From SeekIC.
MFG:KA Package Cooled:TO-
Part Number: FQU3N25
MFG: KA
Package Cooled: TO-
Description: These N-Channel enhancement mode power field effect transistors are produced using ...
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FQU3N25
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DataSheet
General Description
FQU3N25 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
FQU3N25 Maximum Ratings
| Symbol | Parameter | FQD3N25 / FQU3N25 | Units |
| VDSS | Drain-Source Voltage | 250 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
2.4 | A |
| 1.5 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 9.6 | A |
| VGSS | Gate-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 40 | mJ |
| IAR | Avalanche Current (Note 1) | 2.4 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.0 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
30 | W | |
| 0.24 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
FQU3N25 Features
• 2.4A, 250V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 4.7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 4.7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU3N25
PDF/DataSheet Download
- Datasheet: FQU3N25
- File Size: 683266 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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