FQU3P50

Features: • -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD3P50 / FQU3P50 Units VD...

product image

FQU3P50 Picture
SeekIC No. : 004343383 Detail

FQU3P50: Features: • -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improve...

floor Price/Ceiling Price

Part Number:
FQU3P50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

 

Symbol

Parameter

FQD3P50 / FQU3P50

Units

VDSS

Drain-Source Voltage

-500

V

ID

Drain Current

- Continuous (TC = 100°C)

-2.1

A

 

- Continuous (TC = 25°C)

-1.33

A

IDM

Drain Current Pulsed                     (Note 1)

-8.4

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy            (Note 2)

250

mJ

IAR

Avalanche Current                         (Note 1)

-2.1

A

EAR

Repetitive Avalanche Energy                (Note 1)

5.0

mJ

d v/dt

Peak Diode Recovery dv/dt                  (Note 3)

-4.5

V/ns

PD

TJ, TSTG

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

30

W/°C

0.24

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300

°C




Description

These P-Channel enhancement mode power field effect transistors of FQU3P50 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQU3P50 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU3P50 is well suited for electronic lamp ballast based on complimentary half bridge.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Line Protection, Backups
Cable Assemblies
Power Supplies - Board Mount
Batteries, Chargers, Holders
Semiconductor Modules
View more