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FQU7P20TU_AM002

MOSFET 200V 5.7A 0.69OHM P-Channel

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SeekIC No. : 00161128 Detail

FQU7P20TU_AM002: MOSFET 200V 5.7A 0.69OHM P-Channel

FQU7P20TU_AM002 Data Sheet

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Part Number:
FQU7P20TU_AM002
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.7 A
Resistance Drain-Source RDS (on) : 0.69 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 5.7 A
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.69 Ohms


Parameters:

Technical/Catalog InformationFQU7P20TU_AM002
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C5.7A
Rds On (Max) @ Id, Vgs690 mOhm @ 2.85A, 10V
Input Capacitance (Ciss) @ Vds 770pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU7P20TU_AM002
FQU7P20TU_AM002



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