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MFG:KA  Package Cooled:TO-  

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Part Number: FQU9N08

 

MFG: KA

Package Cooled: TO-

 

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stri...


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FQU9N08 General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

FQU9N08 Maximum Ratings

Symbol Parameter FQT7N10
Units
VDSS Drain-Source Voltage(Note 2) 80 V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 70°C)		 7.4 A
4.68 A
IDM Drain Current - Pulsed (Note 1) 29.6 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy 55 mJ
IAR Avalanche Current (Note 1) 7.4 A
EAR Repetitive Avalanche Energy (Note 1) 2.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns
PD Power Dissipation (TC = 25°C) 2.5 W
Power Dissipation (TC = 25°C) - Derate above 25°C 25 W
0.2 W/°C
TJ, TSTG Operating and Storage Temperature Range
 -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
 300 °C

FQU9N08 Features

• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical  13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FQU9N08 datasheet

FQU9N08
PDF/DataSheet Download

  • Datasheet: FQU9N08
  • File Size: 548897 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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