FQU9N25TU

MOSFET 250V N-Channel QFET

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FQU9N25TU: MOSFET 250V N-Channel QFET

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US $ .21~.23 / Piece | Get Latest Price
Part Number:
FQU9N25TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3600
  • 3600~5000
  • 5000~10000
  • Unit Price
  • $.23
  • $.21
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/2

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7.4 A
Resistance Drain-Source RDS (on) : 0.42 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Resistance Drain-Source RDS (on) : 0.42 Ohms
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7.4 A
Package / Case : IPAK


Parameters:

Technical/Catalog InformationFQU9N25TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C7.4A
Rds On (Max) @ Id, Vgs420 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU9N25TU
FQU9N25TU



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