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Description: The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized ...


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FS12DH General Description


The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

FS12DH Maximum Ratings

Parameter Symbol Rating Unit
Min Max
Storage Temperature Tstg 55 +125
Ambient Temperature with Power Applied TA 40 +85
Voltage with Respect to Ground All inputs and I/Os
pins except as noted below*1,*2
VIN, VOUT 0.5 VCCQ+0.5 V
Power Supply Voltage*1 VCC 0.5 +2.5 V
I/O's Power Supply Voltage VCCQ 0.5 +2.5 V
ACC*1,*3 VACC 0.5 +10.5 V

*1 : Voltage is defined on the basis of VSS = GND = 0 V.
*2 : Minimum DC voltage on input or l/O pins is 0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input or l/O pins is VCC +0.5 V. During voltage ransitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns.
*3 : Minimum DC input voltage on ACC pin is 0.5 V. During voltage transitions, ACC pin may undershoot VSS to 2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (VIN - VCC) does not exceed +8.0 V. Maximum DC input voltage on ACC pin is +10.5 V which may overshoot to +12.5 V for periods of up to 20 ns.

FS12DH Features

• 0.13 mm process technology
• Single 1.8 V read, program and erase (1.65 V to 1.95 V)
• Simultaneous Read/Write operation (Dual Bank)
• FlexBankTM*1
Bank A: 16 Mbit (4 Kwords ´ 8 and 32 Kwords ´ 31)
Bank B: 48 Mbit (32 Kwords ´ 96)
Bank C: 48 Mbit (32 Kwords ´ 96)
Bank D: 16 Mbit (4 Kwords ´ 8 and 32 Kwords ´ 31)

FS12DH datasheet

FS1001-7R
PDF/DataSheet Download

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