FS50R17KE3_B17, US $ 98.8-98.8 , Infineon Technologies, FS50R17KE3_B17 DataSheet download, circuit diagram from SeekIC.com

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FS50R17KE3_B17: IGBT Modules IGBT MODULE HALF BRG 50A 1700V

FS50R17KE3_B17 Data Sheet

US $ 98.8~98.8 / Piece | Get Latest Price

Part Number:: FS50R17KE3_B17
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$98.8

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15 Days

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Upload time: 2024/4/27

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Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	IGBT-Inverter
Collector- Emitter Voltage VCEO Max :	1.7 kV	Collector-Emitter Saturation Voltage :	200 V
Continuous Collector Current at 25 C :	82 A	Gate-Emitter Leakage Current :	400 nA
Power Dissipation :	345 W	Maximum Operating Temperature :	+ 125 C
Package / Case :	Module

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 125 C
Gate-Emitter Leakage Current : 400 nA
Configuration : IGBT-Inverter
Collector- Emitter Voltage VCEO Max : 1.7 kV
Collector-Emitter Saturation Voltage : 200 V
Continuous Collector Current at 25 C : 82 A
Power Dissipation : 345 W
Package / Case : Module

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FS50R17KE3_B17

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