Features: 8A, 200V, rDS(ON)= 0.440UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity for LET of 36MeV/mg/cm2with VDSup to 100% of Rated Breakdown and VGSof 10V Off-BiasDose Rate -Typic...
FSS230D: Features: 8A, 200V, rDS(ON)= 0.440UIS RatedTotal Dose -Meets Pre-RAD Specifcations to 100K RAD (Si) -Rated to 300K RAD (Si)Single Event -Safe Operating Area Curve for Single Event Effe -SEE Immunity...
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The Discrete Products Operation of Intersil Corporation FSS230D has developed a series of Radiation Hardened MOSFETs specif- ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particu- lar, FSS230D is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space envi- ronments.
The dose rate and neutron tolerance necessary for military applications have not been sacrifced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSS230D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.