FW10G

Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Fast switching for high efficiency* Ideal for printed circuit boardSpecifications RATING SYMBOL FW005G FW01G FW02G FW04G FW06...

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FW10G Picture
SeekIC No. : 004345561 Detail

FW10G: Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Fast switching for high efficiency* ...

floor Price/Ceiling Price

Part Number:
FW10G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

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Product Details

Description



Features:

* Glass passivated chip
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board




Specifications

RATING SYMBOL FW
005G
FW
01G
FW
02G
FW
04G
FW
06G
FW
08G
FW
10G
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current
0.375" (9.5 mm) lead length Tc = 25°C
IF(AV) 1.5 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
IFSM 30 Amps.
Rating for fusing ( t < 8.3 ms. ) I2t 10 A2S
Maximum Forward Voltage per Diode at IF = 1.0 Amp. VF 1.3 Volts
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
IR 10 mA
IR(H) 1.0 mA
Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns
Typical Junction Capacitance per Diode (Note 2) CJ 24 pf
Typical Thermal Resistance (Note 3) RJA 36 °C/W
Operating Junction Temperature Range TJ - 50 to + 150 °C
Storage Temperature Range TSTG - 50 to + 150 °C



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