Features: *Capable of 2.5V gate drive*Low on-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3, VGS@4.5V ID@TA=25 3.5 A Continuous Drain Current3, VGS@4.5...
G2314: Features: *Capable of 2.5V gate drive*Low on-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ...
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| Parameter |
Symbol |
Ratings |
Unit |
| Drain-Source Voltage |
VDS |
20 |
V |
| Gate-Source Voltage |
VGS |
±12 |
V |
| Continuous Drain Current3, VGS@4.5V |
ID@TA=25 |
3.5 |
A |
| Continuous Drain Current3, VGS@4.5V |
ID@TA=70 |
2.8 |
A |
| Pulsed Drain Current1,2 |
IDM |
10 |
A |
| Power Dissipation |
PD@TA=25 |
1.38 |
W |
| Linear Derating Factor |
0.01 |
W/ | |
| Operating Junction and Storage Temperature Range |
Tj, Tstg |
-55 ~ +150 |
The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The G2314 is universally used for all commercial-industrial applications.