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- Table of contents:
G3018
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Suppliers
DataSheet
General Description
G3018 General Description
N-channel enhancement-mode MOSFET
G3018 Maximum Ratings
| Parameter |
Symbol |
Ratings |
Unit |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
30 ±20 |
V V |
| Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 |
ID @TA=25 ID @TA=100 IDM |
115 75 800 |
mA mA mA |
| Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range |
PD @TA=25 Tj, Tstg |
0.225 0.0018 -40 ~ +150 |
W W/ |
G3018 Features
·Low on-resistance.
·Fast switching speed.
·Low voltage drive (2.5V) makes this device ideal for portable equipment.
·Easily designed drive circuits.
·Easy to parallel.
·Fast switching speed.
·Low voltage drive (2.5V) makes this device ideal for portable equipment.
·Easily designed drive circuits.
·Easy to parallel.
G301
PDF/DataSheet Download
- Datasheet: G301
- File Size: 39275 KB
- Manufacturer: ETC [ETC]
- Click here to Download
- ·G3067
- HAMAMATSU [Hamamatsu Corporation]
- GaAsP photodiode
- 176752 KB
- ·G30N60
- ETC
- 220309 KB
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