GA200TS60UPBF

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Configuration : Dual
Packaging : Bulk
Package / Case : INT-A-PAK
Continuous Collector Current at 25 C : 265 A


Description

The GA200TS60UPbF is designed as one kind of "high-bridge" IGBT INT-A-PAK (ultrafast speed IGBT) with current of 200A. GA200TS60UPbF's benefits include increased operating efficiency, direct mounting to heatsink, performance optimized for power conversion: UPS, SMPS, welding and low EMI, requires less snubbing.

GA200TS60UPbF has eight features. (1)Generation 4 IGBT technology. (2)Ultrafast: optimized for high speed 8kHz to 40kHz in hard switching, >200kHz in resonant mode. (3)Very low conduction and switching losses. (4)HEXFRED antiparallel diodes with ultrasoft recovery. (5)Industry standard package. (6)UL approved file E78996. (7)Compliant to RoHS directive 2002/95/EC. (8)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of GA200TS60UPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 265A at Tc=25°C and would be 200A at Tc=67°C. (3)Its pulsed collector current would be 400A. (4)Its peak switching current would be 400A. (5)Its peak diode forward current would be 400A. (6)Its gate to emitter voltage would be +/-20V. (7)Its RMS isolation voltage would be 2500V. (8)Its maximum power dissipation would be 625W at Tc=25°C and would be 325W at Tc=85°C. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GA200TS60UPbF are concluded into several points as follow. (1)Its collector to emitter voltage would be typ 1.74V and max 2.2V and would be typ 1.79V and max 2.25V at Tj=125°C. (2)Its gate threshold voltage would be min 3V and typ 4.4V and max 6V. (3)Its forward transconductance would be 220S. (4)Its temperature coefficient of threshold voltage would be typ -11mV/°C. (5)Its diode forward voltage drop would be typ 4.2V and max 6.0V. And so on. If you have any question or suggestion about GA200TS60UPbF please visit our website and contact us for details. Thank you!