Purchase GA300TD60U, In-stock GA300TD60U From SeekIC.
MFG:module Package Cooled:IR D/C:05+
- Table of contents:
GA300TD60U
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Suppliers
DataSheet
General Description
GA300TD60U Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 600 | V |
| IC @ TC=25°C | Continuous Collector Current | 300 | A |
| ICM | Pulsed Collector Current | 600 | |
| ILM | Clamped Inductive Load Current | 600 | |
| IFM | Peak Diode Forward Current | 600 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 155 | mJ |
| VISOL | RMS Isolation Voltage, Any Terminal to Case, t=1 min | 2500 | V |
| PD @ TC=25°C | Maximum Power Dissipation | 880 | W |
| PD @ TC=85°C | Maximum Power Dissipation |
460 | |
| TJ | Operating Junction | -40 to + 150 | °C |
| TSTG | Storage Temperature Range | -40 to + 125 |
GA300TD60U Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
GA300TD60U Typical Application
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing
GA300TD60U
PDF/DataSheet Download
- Datasheet: GA300TD60U
- File Size: 248394 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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