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GA400TD25S

IGBT Modules 250 Volt 400 Amp

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SeekIC No. : 00142184 Detail

GA400TD25S: IGBT Modules 250 Volt 400 Amp

GA400TD25S Data Sheet

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Part Number:
GA400TD25S
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Dual
Collector- Emitter Voltage VCEO Max : 250 V Continuous Collector Current at 25 C : 400 A
Maximum Operating Temperature : + 150 C Package / Case : Dual INT-A-Pak
Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Configuration : Dual
Packaging : Bulk
Continuous Collector Current at 25 C : 400 A
Collector- Emitter Voltage VCEO Max : 250 V
Package / Case : Dual INT-A-Pak


Features:

• Generation 4 IGBT technology
• Standard:  Optimized for minimum saturation voltage and  operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft  recovery
• Industry standard package
• UL approved




Application

• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS, SMPS, Welding
• Lower EMI, requires less snubbing


Specifications

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 250 V
IC @ TC=25°C Continuous Collector Current 400 A
ICM Pulsed Collector Current 800
ILM Clamped Inductive Load Current 800
IFM Peak Diode Forward Current 800
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy 155 mJ
VISOL RMS Isolation Voltage, Any Terminal to Case, t=1 min 2500 V
PD @ TC=25°C Maximum Power Dissipation 1350 W
PD @ TC=85°C Maximum Power Dissipation

700

TJ Operating Junction -40 to + 150 °C
TSTG Storage Temperature Range -40 to + 125



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