GAL16V8Z General Description
GAL16V8Z Maximum Ratings
Supply voltage VCC ......................................... .5 to +7V
Input voltage applied .......................... 2.5 to VCC +1.0V
Off-state output voltage applied ......... 2.5 to VCC +1.0V
Storage Temperature ................................... 65 to 150
Ambient Temperature with
Power Applied .............................................. 55 to 125
1. Stresses above those listed under the "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress only
ratings and functional operation of the device at these or at any
other conditions above those indicated in the operational sections of
this specification is not implied (while programming, follow the
programming specifications).
GAL16V8Z Features
• ZERO POWER E2CMOS TECHNOLOGY
- 100µA Standby Current
- Input Transition Detection on GAL16V8Z
- Dedicated Power-down Pin on GAL16V8ZD
- Input and Output Latching During Power Down
• HIGH PERFORMANCE E2 CMOS TECHNOLOGY
- 12 ns Maximum Propagation Delay
- Fmax = 83.3 MHz
- 8 ns Maximum from Clock Input to Data Output
- TTL Compatible 16 mA Output Drive
- UltraMOS® Advanced CMOS Technology
• E2CELL TECHNOLOGY
- Reconfigurable Logic
- Reprogrammable Cells
- 100% Tested/100% Yields
- High Speed Electrical Erasure (<100ms)
- 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
- Maximum Flexibility for Complex Logic Designs
- Programmable Output Polarity
- Architecturally Similar to Standard GAL16V8
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
- 100% Functional Testability
• APPLICATIONS INCLUDE:
- Battery Powered Systems
- DMA Control
- State Machine Control
- High Speed Graphics Processing
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
GAL16V8Z Connection Diagram
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