GB100DA60UP

The GB100DA60UP si designed as one kind of insulated gate bipolar transistors (warp 2 speed IGBT) with current of 100A. It is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and would be easy to assemble and parallel.

It has eight features. (1)NPT warp 2 speed IGBT technology with positive temperature coefficient. (2)Square RBSOA. (3)HEXFRED antiparallel diodes with ultrasoft reverse recovery. (4)Fully isolated package. (5)Very low internal inductance ( 5nH typical). (6)Industry standard outline. (7)UL approved file E78996. (8)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 125A at Tc=25°C and would be 85A at Tc=80°C. (3)Its pulsed collector current would be 300A. (4)Its clamped inductive load current would be 300A. (5)Its diode continuous forward current would be 160A at Tc=25°C and would be 105A at Tc=80°C. (6)Its peak diode forward current would be 200A. (7)Its gate to emitter voltage would be +/-20V. (8)Its power dissipation, IGBT would be 447W at Tc=25°C and would be 250W at Tc=80°C. (9)Its power dissipation, diode would be 313W at Tc=25°C and would be 175W at Tc=80°C. (10)Its isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coefficient of threshold voltage would be typ -10mV/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!