GB100TS60NPbF

The GB100TS60NPbF is designed as one kind of INT-A-PAK "half-bridges" (ultrafast speed IGBT) with current of 108A. GB100TS60NPbF's benefits include benchmark efficiency for UPS and welding application, rugged transient performance, direct mounting on heatsink and very low junction to case thermal resistance.

GB100TS60NPbF has twelve features. (1)Generation 5 non punch through (NPT) technology. (2)Ultrafast: optimized for hard switching speed 8kHz to 60kHz. (3)Low Vce(on). (4)10s short circuit capability. (5)Square RBSOA. (6)Positive Vce(on) temperature coefficient. (7)HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics. (8)Industry standard package. (9)Al2O3 DBC. (10)UL approved file E78996. (11)Compliant to RoHS directive 2002/95/EC. (12)Designed for industrial level. Those are all the main features.

Some absolute maximum ratings of GB100TS60NPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 108A at Tc=25°C and would be 74A at Tc=80°C. (3)Its pulsed collector current would be 200A. (4)Its clamped inductive load current would be 200A. (5)Its diode continuous forward current would be 106A at Tc=25°C and would be 69A at Tc=80°C. (6)Its gate to emitter voltage would be +/-20V. (7)Its maximum power dissipation would be 390W at Tc=25°C and would be 219W at Tc=80°C. (8)Its isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GB100TS60NPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its gate threshold voltage would be min 3V, typ 4.6V and max 6V. (3)Its collector to emitter leakage current would be typ 0.01mA, max 0.1mA at Vge=0V, Vce=600V and would be typ 3.7mA, max 10mA at Vge=oV, Vce=600V, Tj=150°C. (4)Its gate to emitter leakage current would be max +/-200nA. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GB100TS60NPbF please contact us for details. Thank you!