DescriptionThe GB15XP120KTPbF is designed as one kind of three phase inverter modules in MTP package 1200V NPT IGBT and HEXFRED diodes with current of 15A. GB15XP120KTPbF's benefits include optimized for inverter motor drive applications, low EMI, requires less snubbing, direct mounting to heatsin...
GB15XP120KTPbF: DescriptionThe GB15XP120KTPbF is designed as one kind of three phase inverter modules in MTP package 1200V NPT IGBT and HEXFRED diodes with current of 15A. GB15XP120KTPbF's benefits include optimize...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe GB150TS60NPbF is designed as one kind of INT-A-PAK half-bridges (ultrafast speed ...
The GB15XP120KTPbF is designed as one kind of three phase inverter modules in MTP package 1200V NPT IGBT and HEXFRED diodes with current of 15A. GB15XP120KTPbF's benefits include optimized for inverter motor drive applications, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and very low junction to case thermal resistance.
GB15XP120KTPbF has twelve features. (1)Generation 5 NPT 1200 V IGBT technology. (2)HEXFRED diode with ultrasoft reverse recovery. (3)Very low conduction and switching losses. (4)Optional SMT thermistor (NTC). (5)Aluminum oxide DBC. (6)Very low stray inductance design for high speed operation. (7)Short circuit 10s. (8)Square RBSOA. (9)Operating frequencies 8kHz to 60kHz. (10)UL approved file E78996. (11)Compliant to RoHS directive 2002/95/EC. (12)Designed and qualified for industrial level. Those are all the main features.
Some absolute maximum ratings of GB15XP120KTPbF have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 30A at Tc=25°C and would be 15A at Tc=100°C. (3)Its pulsed collector current would be 60A. (4)Its peak switching current would be 60A. (5)Its diode continuous forward current would be 15A. (6)Its peak diode forward current would be 30A. (7)Its gate to emitter voltage would be +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation (including diode and IGBT) would be 187W at Tc=25°C and would be 75W at Tc=100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of GB15XP120KTPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its temperature coefficient of V(br)ces would be typ 1.11V/°C. (3)Its gate threshold voltage would be min 4V and max 6V. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information about GB15XP120KTPbF please contact us for details. Thank you!