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Part Number: GLT5640L32
Description: The G-Link GLT5640L32 is a high speed 67,108,864bits CMOS Synchronous DRAM organized as 4 banks of 524...


Description: The G-Link GLT5640L32 is a high speed 67,108,864bits CMOS Synchronous DRAM organized as 4 banks of 524...
The G-Link GLT5640L32 is a high speed 67,108,864bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits.
GLT5640L32 is offering fully synchronous operation and is referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
|
PARAMETER |
SYMBOL |
RATING |
UNIT |
| Ambient Temperature |
TA |
0~70 |
°C |
| Storage Temperature |
TSTG |
-55~125 |
°C |
| Voltage on Any Pin relative to VSS |
VIN,VOUT |
-1.0~4.6 |
V |
| Voltage on VDD relative to VSS |
VDD, VDDQ |
-1.0~4.6 |
V |
| Short Circuit Output Current |
IOS |
50 |
mA |
| Power Dissipation |
PD |
1 |
W |
• JEDEC standard 3.3V power supply.
• Auto refresh and self refresh.
• All device pins are compatible with LVTTL interface.
• 4096 refresh cycle / 64ms.
• JEDEC standard 86pin 400mil TSOP-II with 0.5mm of pin pitch.
• Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
• Programmable CAS Latency : 2,3 clocks.
• All inputs and outputs referenced to the positive edge of the system clock.
• Data mask function by DQM0,1,2 and 3.
• Internal four banks operation.
• Burst Read Single Write operation.
• Automatic precharge, includes CONCURRENT Auto Precharge Mode and controlled Precharge
GLT5640L32
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