Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT.·LOW LEAKAGE CURRENT AT HIGH TEMPERATURE.·LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER.Specifications Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 10...
GMR10H100C: Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT.·LOW LEAKAGE CURRENT AT HIGH TEMPERATURE.·LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BAR...
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Features: ·High junction temperature capability·Good trade off between leakage current and forward...
Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD...
Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD...
| Symbol | Parameter | Value | Unit | |||
| VRRM | Repetitive peak reverse voltage | 100 | V | |||
| IF(RMS) | RMS forward current | 10 | A | |||
| IF(AV) | Average forward current = 0.5 |
TO-220AB, TO-252 | TC = 165°C | per diode per device |
5 10 |
A |
| TO-220FPAB | T C = 160°C | |||||
| IFSM | Surge non repetitive forward current | tp = 10 ms sinusoidal | 180 | A | ||
| IRRM | Repetitive peak reverse current | tp = 2 µs square F = 1kHz | 1 | A | ||
| Tstg | Storage temperature range | -65 to + 175 | ||||
| TJ | Maximum operating junction temperature* | 175 | ||||
| dV/dt | Critical rate of rise of reverse voltage | 10000 | V/ µs | |||