GN1F4N

The GN1F4N is designed as medium speed switching resistor built-in type PNP transistor.

GN1F4N has two features. (1)Resistors built-in type. (2)Complementary to GA1F4N. Those are all the main features.

Some absolute maximum ratings of GN1F4N have been concluded into several points as follow. (1)Its collector to base voltage would be -60V. (2)Its collector to emitter voltage would be -50V. (3)Its emitter to base voltage would be -5V. (4)Its collector current DC would be -100mA. (5)Its collector current pulse would be -200mA. (6)Its total power dissipation at 25°C ambient temperature would be 150mW. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of GN1F4N are concluded as follow. (1)Its collector cutoff current would be max -100nA. (2)Its DC current gain would be min 85 and typ 150 and max 240 with test conditions of Vce=-5V and Ic=-5.0mA and it would be min 95 and typ 200 with test conditions of Vce=-5V and Ic=-50mA. (3)Its collector saturation voltage would be typ -0.04V and max -0.2V with test conditions of Ic=-5mA and Ib=-0.25mA. (4)Its low level input voltage would be typ -0.85V and max -0.6V with test conditions of Vce=-5V and Ic=-100uA. (5)Its high level input voltage would be min -3.0V and typ -1.3V with test conditions of Vce=-0.2V and Ic=-5mA. (6)Its input resistor would be min 15.4k and typ 22.0k and max 28.6k. (7)Its emitter to base resistor would be min 32.9k and typ 47k and max 61.1k. (8)Its turn-on time would be typ 0.2us and max 0.3us. (9)Its storage time would be typ 1.5us and max 5.0us. (10)Its turn off time would be typ 2.0us and max 6.0us. And so on. If you have any question or suggestion or want to know more information about GN1F4N please contact us for details. Thank you!