GN1F4Z

The GN1F4Z is designed as medium speed switching resistor built-in type PNP transistor.

It has two features. (1)Resistors built-in type. (2)Complementary to GA1F4Z. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be -60V. (2)Its collector to emitter voltage would be -50V. (3)Its emitter to base voltage would be -5V. (4)Its collector current DC would be -100mA. (5)Its collector current pulse would be -200mA. (6)Its total power dissipation at 25°C ambient temperature would be 150mW. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector cutoff current would be max -100nA. (2)Its DC current gain would be min 135 and typ 280 and max 600 with test conditions of Vce=-5V and Ic=-5.0mA and it would be min 100 and typ 200 with test conditions of Vce=-5V and Ic=-50mA. (3)Its collector saturation voltage would be typ -0.06V and max -0.2V with test conditions of Ic=-5mA and Ib=-0.25mA. (4)Its high level input voltage would be typ -0.57V and max -0.5V with test conditions of Vce=-5V and Ic=-100uA. (5)Its low level input voltage would be min -3.0V and typ -1.1V with test conditions of Vce=-0.2V and Ic=-5mA. (6)Its input resistor would be min 15.4k and typ 22.0k and max 28.6k. (7)Its turn-on time would have the maximum value of 0.2us. (8)Its storage time would have the maximum value of 5.0us. (10)Its turn off time would have the maximum value of 6.0us with test conditions of Vcc=-5V, Vin=-5V, RL=1Kohms, PW=2us, duty cycle<=2%. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!