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Part Number: GP201MHS18
Description: The Powerline range of high power modules includes half bridge, dual and single switch configurations covering volta...
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GP201MHS18
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DataSheet
General Description
GP201MHS18 General Description
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
GP201MHS18 Maximum Ratings
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
| Symbol | Parameter |
Test Conditions |
Max. |
Units |
| VCES | Collector-emitter voltage |
VGE = 0V |
1800 |
V |
| VGES | Gate-emitter voltage |
- |
±20 |
V |
| IC | Collector current |
DC, Tcase = 80°C for Tj = 125°C |
200 |
A |
| IC(PK) | Peak collector current |
1ms, Tcase = 120°C |
400 |
A |
| Pmax | Max. transistor power dissipation |
Tcase = 25°C, Tj = 150°C |
1500 |
W |
| Visol | Isolation voltage |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
V |
GP201MHS18 Features
·Low VCE(SAT)
·Non Punch Through Silicon
·Isolated Copper Baseplate
·Low Inductance Internal Construction
·200A Per Arm
·Non Punch Through Silicon
·Isolated Copper Baseplate
·Low Inductance Internal Construction
·200A Per Arm
GP201MHS18 Typical Application
·High Reliability Inverters
·Motor Controllers
·Traction Drives
·Resonant Converters
·Motor Controllers
·Traction Drives
·Resonant Converters
GP201MHS18
PDF/DataSheet Download
- Datasheet: GP201MHS18
- File Size: 132361 KB
- Manufacturer: DYNEX [Dynex Semiconductor]
- Click here to Download
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GP200MHS18
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GP200MHS12
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