MFG:GTM Package Cooled:SSOP-B8 D/C:06+
MFG: GTM
Package Cooled: SSOP-B8
D/C: 06+
Description: The GP24BC family provides 1K, 2K, 4K, 8K and 16K of serial electrically erasable and programmable rea...
The GP24BC family provides 1K, 2K, 4K, 8K and 16K of serial electrically erasable and programmable read-only memory (EEPROM). The wide Vdd range allows for low-voltage operation down to 1.8V. The device, fabricated using traditional CMOS EEPROM technology, is optimized for many industrial and commercial applications where low-voltage and low-power operation is essential. The device is accessed via a 2-wire serial interface.
| Parameter | Ratings | Unit |
| Voltage on Any Pin with Respect to Ground | -0.8 to Vcc +1.5 | V |
| Maximum Operating Voltage | 6.25 | V |
| DC Output Current | 5.0 | mA |
| Operating Temperature Range | -55 ~ +125 | |
| Storage Temperature Range | -65 ~ +150 |
Note: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of these specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
GP2001-7R
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The GP24BC family provides 1K, 2K, 4K, 8K and 16K of serial electrically erasable and programmable read-only memory (EEPROM). The wide Vdd range allows for low-voltage operation down to 1.8V. The GP24BC family, fabricated using traditional CMOS EEPROM techno...
The Powerline range of high power modules GP2401ESM18includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP2401ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar t...
The powerline range of high power modules GP2400ESM18includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP2400ESM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar tr...
The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. ...
CAP CER 2200PF 1000V Y5P 10% RAD
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