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Part Number: GS815018
Description: Because GS815018/36A are synchronous devices, address data inputs and read/write control inputs are ca...


Description: Because GS815018/36A are synchronous devices, address data inputs and read/write control inputs are ca...
Because GS815018/36A are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.
GS815018/36A support pipelined reads utilizing a rising-edge-triggered output register. They also utilize a Dual Cycle Deselect (DCD) output deselect protocol.
GS815018/36A are implemented with high performance technology and are packaged in a 119-bump BGA.
|
Symbol |
Description |
Value |
Unit |
|
VDD |
Voltage on VDD Pins |
0.5 to 3.6 |
V |
|
VDDQ |
Voltage in VDDQ Pins |
0.5 to VDD |
V |
|
VI/O |
Voltage on I/O Pins |
0.5 to VDDQ + 0.5 ( 3.6 V max.) |
V |
|
VIN |
Voltage on Other Input Pins |
0.5 to VDDQ + 0.5 ( 3.6 V max.) |
V |
|
IIN |
Input Current on Any Pin |
+/20 |
mA dc |
|
IOUT |
Output Current on Any I/O Pin |
+/20 |
mA dc |
|
TJ |
Maximum Junction Temperature |
125 |
|
|
TSTG |
Storage Temperature |
55 to 125 |
GS809C
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