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Description: The GS882Z18/36B is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other p...


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GS882Z36BB General Description


The GS882Z18/36B is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.

Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.

The GS882Z18/36B may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.

The GS882Z18/36B is implemented with GSI's high performance CMOS technology and is available in JEDECstandard 119-bump BGA and 165-bump FPBGA packages.

GS882Z36BB Maximum Ratings

Symbol

Description

Value

Unit

VDD

Voltage on VDD Pins

0.5 to 4.6

V

VDDQ

Voltage in VDDQ Pins

0.5 to 4.6

V

VI/O

Voltage on I/O Pins

0.5 to VDDQ +0.5 ( 4.6 V max.)

V

VIN

Voltage on Other Input Pins

0.5 to VDD +0.5 ( 4.6 V max.)

V

IIN

Input Current on Any Pin

+/20

mA

IOUT

Output Current on Any I/O Pin

+/20

mA

PD

Package Power Dissipation

1.5

W

TSTG

Storage Temperature

55 to 125

oC

TBIAS

Temperature Under Bias

55 to 125

oC

GS882Z36BB Features

• NBT (No Bus Turn Around) functionality allows zero wait
   Read-Write-Read bus utilization; fully pin-compatible with
   both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip parity encoding and error detection
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-bump BGA and 165-bump FPBGA packages

GS882Z36BB datasheet

GS882Z36BB-150
PDF/DataSheet Download

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