Features: ·Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA·Complementary to GSMBT2015Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 35 V Collector to Emitter Volt...
GSMBT4076: Features: ·Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA·Complementary to GSMBT2015Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 Storage Te...
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Parameter | Symbol | Ratings | Unit |
Junction Temperature | TJ | +150 | |
Storage Temperature | Tstg | -55 ~ +150 | |
Collector to Base Voltage | VCBO | 35 | V |
Collector to Emitter Voltage | VCEO | 30 | V |
Emitter to Base Voltage | VEBO | 5 | V |
Emitter to Base Voltage | IC | 500 | mA |
Base Current | IB | 50 | mA |
Emitter to Base Voltage | PD | 250 | mW |
The GSMBT4076 is designed for general purpose switching and amplifier applications.