Features: ·Complementary to GSMBT4403·High DC Current Gain: 100-300 at 150mASpecifications Parameter q Symbol Ratingsx Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage at Ta=25 VCBO 6...
GSMBT4401: Features: ·Complementary to GSMBT4403·High DC Current Gain: 100-300 at 150mASpecifications Parameter q Symbol Ratingsx Unit Junction Temperature Tj +150 Storage ...
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Parameter q |
Symbol |
Ratingsx |
Unit |
Junction Temperature |
Tj |
+150 |
|
Storage Temperature |
Tstg |
-55 ~ +150 |
|
Collector to Base Voltage at Ta=25 |
VCBO |
60 |
V |
Collector to Emitter Voltage at Ta=25 |
VCEO |
40 |
V |
Emitter to Base Voltage at Ta=25 |
VEBO |
6 |
V |
Collector Current at Ta=25 |
IC |
600 |
mA |
Total Power Dissipation at Ta=25 |
PD |
250 |
mW |