GSMBT5401

Features: ·High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA)·Complementary to GSMBT5551Specifications Characteristics Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base voltage BVCBO -160 V Collector ...

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SeekIC No. : 004356773 Detail

GSMBT5401: Features: ·High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA)·Complementary to GSMBT5551Specifications Characteristics Symbol Ratings Unit Junction Temperature Tj +150 ...

floor Price/Ceiling Price

Part Number:
GSMBT5401
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

 ·High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA)
 ·Complementary to GSMBT5551



Specifications

Characteristics Symbol Ratings Unit
Junction Temperature Tj +150
Storage Temperature Tstg -55 ~ +150
Collector to Base voltage BVCBO -160 V
Collector to Emitter voltage BVCEO -150 V
Emitter to Base voltage BVEBO -5 V
Collector Current IC -600 mA
Total Power Dissipation PD 225 mW



Description

The GSMBT5401 is designed for general purpose applications requiring high breakdown voltage.


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