Features: ·High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA)·Complementary to GSMBT5551Specifications Characteristics Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base voltage BVCBO -160 V Collector ...
GSMBT5401: Features: ·High Collector-Emitter Breakdown Voltage (BVCEO=-150V @ IC=-1mA)·Complementary to GSMBT5551Specifications Characteristics Symbol Ratings Unit Junction Temperature Tj +150 ...
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Characteristics | Symbol | Ratings | Unit |
Junction Temperature | Tj | +150 | |
Storage Temperature | Tstg | -55 ~ +150 | |
Collector to Base voltage | BVCBO | -160 | V |
Collector to Emitter voltage | BVCEO | -150 | V |
Emitter to Base voltage | BVEBO | -5 | V |
Collector Current | IC | -600 | mA |
Total Power Dissipation | PD | 225 | mW |