GSMBT5551

Features: High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA)Complementary to GSMBT5401PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 180 ...

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SeekIC No. : 004356774 Detail

GSMBT5551: Features: High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA)Complementary to GSMBT5401PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +1...

floor Price/Ceiling Price

Part Number:
GSMBT5551
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA)
Complementary to GSMBT5401



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
225
mW



Description

The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage.


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