Features: High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA)Complementary to GSMBT5401PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 180 ...
GSMBT5551: Features: High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA)Complementary to GSMBT5401PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +1...
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Parameter |
Symbol |
Ratings |
Unit |
Junction Temperature |
Tj |
+150 |
|
Storage Temperature |
Tstg |
-55 ~ +150 |
|
Collector to Base Voltage |
VCBO |
180 |
V |
Collector to Emitter Voltage |
VCEO |
160 |
V |
Emitter to Base Voltage |
VEBO |
6 |
V |
Collector Current |
IC |
600 |
mA |
Total Power Dissipation |
PD |
225 |
mW |