Features: *High Breakdown Voltage*Low Gate Change*Single Drive RequirementSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3, VGS@10V ID @TA=25 4.6 A Continuous Drain Current3, VGS@10V ID ...
GSS9980: Features: *High Breakdown Voltage*Low Gate Change*Single Drive RequirementSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V...
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| Parameter | Symbol | Ratings | Unit |
| Drain-Source Voltage | VDS | 80 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current3, VGS@10V | ID @TA=25 | 4.6 | A |
| Continuous Drain Current3, VGS@10V | ID @TA=70 | 2.9 | A |
| Pulsed Drain Current1 | IDM | 30 | A |
| Total Power Dissipation | PD @TA=25 | 2 | W |
| Linear Derating Factor | 0.016 | W/ | |
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55~+150 |
The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.