GT100DA120U

The GT100DA120U is designed as one kind of insulated gate bipolar transistors (trench IGBT) with current of 100A. It is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating and it would be easy to assemble and parallel.

It has ten features. (1)Trench IGBT technology with positive temperature coefficient. (2)Square RBSOA. (3)10s short circuit capability. (4)HEXFRED antiparallel diodes with ultrasoft reverse recovery. (5)Tj maximum =150°C. (6)Fully isolated package. (7)Very low internal inductance (<=5nH typical). (8)Industry standard outline. (9)UL approved file E78996. (10)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its continuous collector current would be 258A at Tc=25°C and would be 174A at Tc=80°C. (3)Its pulsed collector current would be 450A. (4)Its clamped inductive load current would be 450A. (5)Its diode continuous forward current would be 50A at Tc=25°C and would be 34A at Tc=80°C. (6)Its peak diode forward current would be 180A. (7)Its gate to emitter voltage would be +/-20V. (8)Its IGBT power dissipation would be 893W at Tc=25°C and would be 221W at Tc=119°C. (9)Its diode power dissipation would be 176W at Tc=25°C and would be 44W at Tc=119°C. (10)Its isolation voltage would be 2500V. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its gate threshold voltage would be min 4.9V and typ 5.9V and max 7.9V. (3)Its threshold voltage temperature coefficient would be typ -17.6mV/°C. And so on. If you have any question or suggestion or want to know more about this IC please contact us for details. Thank you!