GT100DA60U

The GT100DA60U is designed as one kind of insulated gate bipolar transistors (trench IGBT) with current of 100A. GT100DA60U is designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating, and would be easy to assemble and parallel.

GT100DA60U has ten features. (1)Trench IGBT technology with positive temperature coefficient. (2)Square RBSOA. (3)3s short circuit capability. (4)FRED Pt antiparallel diodes with ultrasoft reverse recovery. (5)Tj maximum =175°C. (6)Fully isolated package. (7)Very low internal inductance (<=5nH typical). (8)Industry standard outline. (9)UL approved file E78996. (10)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of GT100DA60U have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 184A at Tc=25°C and would be 137A at Tc=80°C. (3)Its pulsed collector current would be 350A. (4)Its clamped inductive load current would be 350A. (5)Its diode continuous forward current would be 100A at Tc=25°C and would be 71A at Tc=80°C. (6)Its peak diode forward current would be 200A. (7)Its gate to emitter voltage would be +/-20V. (8)Its IGBT power dissipation would be 577W at Tc=25°C and would be 223W at Tc=117°C. (9)Its diode power dissipation would be 205W at Tc=25°C and would be 79W at Tc=117°C. (10)Its isolation voltage would be 2500V. It should be noted that stresses above those values listed in the absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its collector to emitter voltage would be typ 1.72V and max 2.0V and would be typ 2.0V and max 2.2V at Tj=125°C. (3)Its gate threshold voltage would be min 3.5V and typ 4.6V and max 6.5V. And so on. If you have any question or suggestion about GT100DA60U please contact us for details. Thank you!