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GT15J301
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DataSheet
General Description
GT15J301 Maximum Ratings
| Characteristics |
Symbol |
Rating |
Unit | |
| Collector−Emitter Voltage |
VCES |
600 |
V | |
| Gate−Emitter Voltage |
VGES |
±20 |
V | |
| Collector Current | DC |
IC |
15 |
A |
| 1ms |
ICP |
30 |
A | |
| Emitter−Collector Forward Current |
DC |
IF |
15 |
A |
| 1ms |
IFM |
30 |
A | |
| Collector Power Dissipation (Tc = 25) |
PC |
35 |
W | |
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
-55~150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
GT15J301 Typical Application
` Third-generation IGBT
` Enhancement mode type
` High speed : tf = 0.30s (Max.) (IC = 15A)
` Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A)
` FRD included between emitter and collector
` Enhancement mode type
` High speed : tf = 0.30s (Max.) (IC = 15A)
` Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A)
` FRD included between emitter and collector
GT15J301
PDF/DataSheet Download
- Datasheet: GT15J301
- File Size: 300875 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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