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GT15J321

Features: • Fourth-generation IGBT• Fast switching (FS• Enhancement mode type• High speed: tf = 0.03 s (typ.)• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)• FRD included between emitter and collectorSpecifications Parameter Symbol Rating Unit C...

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GT15J321: Features: • Fourth-generation IGBT• Fast switching (FS• Enhancement mode type• High speed: tf = 0.03 s (typ.)• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)• ...

GT15J321 Data Sheet

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Part Number:
GT15J321
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Fourth-generation IGBT
• Fast switching (FS
• Enhancement mode type
• High speed: tf = 0.03 s (typ.)
• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)
• FRD included between emitter and collector


Specifications

Parameter Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collect Current DC IC 15 A
1 ms ICP 30 A
Emitter-collector forward
current		 DC IF 15 A
1 ms IFM

30

Collector power dissipation
(Tc = 25)		 PC 30 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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