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GT30J101

Application• Third-generation IGBT• Enhancement mode type• High speed: tf = 0.30 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 ...

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SeekIC No. : 004357025 Detail

GT30J101: Application• Third-generation IGBT• Enhancement mode type• High speed: tf = 0.30 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Characteristic S...

GT30J101 Data Sheet

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Part Number:
GT30J101
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Third-generation IGBT
• Enhancement mode type
• High speed: tf = 0.30 s (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)


Specifications

Characteristic Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 30 A
1 ms ICP 60
Collector power dissipation
(Tc = 25)		 PC 155 W
Junction temperature Tj 150  
Storage temperature range Tstg −55 to 150  

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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